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Feng Songlin
2011-03-02   visited: 

 Feng Songlin 

President of Shanghai Advanced Research Institute, CAS

Education and Appointments

Feng Songlin was born in April 1964 in Shaodong of Hunan Province. He received his Bachelor’s Degree in the Department of Physics from Wuhan University in 1983 and served as the Teaching Assistant in Wuhan University from 1983 to 1986. He received his Master’s Degree in 1987, PhD in 1990, and the Postdoctoral degree from 1990 to 1992, all from University of Paris VII of France. After that, he served as Associate Professor, Professor (since October 1995), Assistant Director, Vice Director (since October 1997), and Ph.D. Supervisor of Institute of Semiconductors CAS, as well as Vice Director and Director of State Key Laboratory of Semiconductor Superlattices of the Institute. He was the Director of Shanghai Institute of Microsystem and Information Technology, CAS from 2002 to 2008, as well as Director of the Microsystem R&D Center, CAS, and National 863 Expert, and 973 Project Expert, etc. He was appointed the President of preparatory committee of Shanghai Advanced Research Institute, CAS in Dec. 2008. He is now the President of Shanghai Advanced Research Institute, CAS.

Research Interests and Honors

Prof. Feng has made several significant achievements in physics, materials and devices of low-dimensional semiconductors. He adopted the DLTS method innovatively to study the deep energy level in superlattices, achieving results widely acknowledged among peers. As one of the pioneers in the research of self-assembled growth of quantum dots in China, he eliminated people’s doubts about quantum dot lasers with experimental evidence, and developed a new approach to realize consistency in limited energy level by controlling longitudinal dimension of quantum dot. He improved the quality of materials substantially, and realized the control of laser wavelength. He established the only SPM-MBE integrated system in China, and made distinctive achievements in the research of low-dimensional material growth mechanism. His current research field covers microsystem technology, quantum devices and physics, low-dimensional semiconductor materials, devices and physics. 

Prof. Feng’s doctoral dissertation won the President’s Scholarship of Paris University in 1989; he also won the Wang Kuancheng Scientific Research Award in 1992, and the CAS Young Scientists 2nd Prize in 1993. Elected Eisenhower Foundation Fellow in 1997 and won the CAS Natural Sciences 1st Prize with the “Research on Laser Materials and Devices of Self-assembled Growth of Quantum Dots” (ranking the 2nd) in 2000, he received subsidy from National Science Fund for Distinguished Young Scholars. He has published over a hundred papers in authoritative publications both inside and outside China, which have been cited for over 200 times.

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