Prof. DENG Haixiao received his Bachelor's degree in Engineering from Tsinghua University. From September 2004 to July 2009, he studied in Shanghai Institute of Applied Physics, Chinese Academy of Sciences and obtained his Doctor's degree in engineering. He worked as the assistant researcher, associate researcher, and researcher at Shanghai Institute of Applied Physics, Chinese Academy of Sciences. In April 2023, he was appointed the Vice President of Shanghai Advanced Research Institute, Chinese Academy of Sciences. In April 2024, he was appointed the Vice Party Secretary of SARI. 20年4月起任中国科学院上海高等研究院党委副书记 2024年4月起任中国科学院上海高等研究院党委副书记

Prof. DENG has long been engaged in the research of accelerator advanced light source. He has published more than 170 papers in academic journals and conferences such as The Innovation, Physical Review Letters, Nature Photonics, Advanced Photonics, Optica, Nuclear Science and technology, etc. He has participated in the construction of Shanghai Deep Ultraviolet Free-Electron Laser, Dalian Coherent Light Source, Shanghai Soft X-ray Free-Electron Laser User Facility and Shanghai High repetition rate XFEL and Extreme light facility. 

He has presided over a number of projects such as the National Excellent Youth Science Fund, The National Science Fund for Distinguished Young Scholars, NSFC Key Program, National Key Research and Development Program of China, etc.  He is currently the Deputy Editor of Nuclear Science and Techniques, the Deputy Director of the Youth Working Committee of the Chinese Nuclear Society, and the Vice President of the Shanghai Association for Science and Technology Youth Talent.